• DocumentCode
    513947
  • Title

    Electrical and Optical Spectroscopic Characterization of Oxide Traps Induced by Hot Hole Injection

  • Author

    Bourcerie, M. ; Marchetaux, J.-C. ; Boudou, A. ; Vuillaume, Dominique

  • Author_Institution
    BULL S. A, Direction des technologies Avancées, 78340 Les Clayes sous bois, FRANCE.
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    549
  • Lastpage
    552
  • Abstract
    For a better understanding of defects induced by hot carrier stressing in NMOS transistors, the effect of emission enhanced by electric field (Poole-Frenkel effect) and the photodepopulation spectroscopy are used to characterize the traps in the thin gate oxide.
  • Keywords
    Charge carrier processes; Electron emission; Electron traps; Hot carriers; Ionization; Kinetic theory; MOS devices; Optical recording; Spectroscopy; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436547
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513947