Title :
Electrical and Optical Spectroscopic Characterization of Oxide Traps Induced by Hot Hole Injection
Author :
Bourcerie, M. ; Marchetaux, J.-C. ; Boudou, A. ; Vuillaume, Dominique
Author_Institution :
BULL S. A, Direction des technologies Avancées, 78340 Les Clayes sous bois, FRANCE.
Abstract :
For a better understanding of defects induced by hot carrier stressing in NMOS transistors, the effect of emission enhanced by electric field (Poole-Frenkel effect) and the photodepopulation spectroscopy are used to characterize the traps in the thin gate oxide.
Keywords :
Charge carrier processes; Electron emission; Electron traps; Hot carriers; Ionization; Kinetic theory; MOS devices; Optical recording; Spectroscopy; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
