DocumentCode
513948
Title
Investigation of GaAs/AIGaAs Quantum Well Lasers by Micro Raman Spectroscopy
Author
Beeck, S. ; Egeler, T. ; Abstreiter, G. ; Brugger, H. ; Epperlein, P.W. ; Webb, D.J. ; Hanke, C. ; Hoyler, C. ; Korte, L.
Author_Institution
Walter Schottky Institut, TUM, D-8046 Garching, FRG
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
508
Lastpage
511
Abstract
GaAs/AlGaAs quantum well lasers are investigated with non destructive micro Raman spectroscopy. Electronic properties and temperature behaviour at the mirror surfaces were studied by probe lasers with high spatial resolution. Electric field induced Raman scattering (EFIRS) is suitable for observing the band bending, caused by surface states. Temperature behaviour of coated and uncoated mirrors and the spatial temperature profile are investigated by measuring the Stokes- and anti-Stokes intensities of the GaAs TO-phonon. Resonant electronic Raman scattering leads to spatial distribution of carrier densities.
Keywords
Gallium arsenide; Mirrors; Probes; Quantum well lasers; Raman scattering; Resonance; Spatial resolution; Spectroscopy; Surface emitting lasers; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436556
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