Influence of Intrinsic Gettering on Silicon Recombination Properties and their Relation to Device Performance

Author

Kittler, Martin ; Richter, Hans ; Seifert, Winfried

Author_Institution

Academy of Sciences of the GDR, Institute of Semiconductor Physics, W.-Korsing-Str. 2, DSR-1200 Frankfurt (Oder)

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

343

Lastpage

346

Keywords

Electrons; Gettering; Probes; Radiative recombination; Silicon; Spontaneous emission; Tin;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

Filename

5436562

Link To Document