Title :
Capacitance-voltage Investigation of Rechargeable Traps in Isotype Laser Heterojunctions
Author :
Bach, H.-G. ; Beister, G.
Author_Institution :
Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, D-1000 Berlin 10, FRG
Abstract :
A new analytical C-V modelling procedure is presented which comprises deep level recharging processes at the isotype Pp heterojunction in conventional PpN DH laser structures. Experimental results an AlGaAs laser diodes can be explained by this approach.
Keywords :
Admittance measurement; Analytical models; Capacitance-voltage characteristics; Diode lasers; Frequency; Gallium arsenide; Heterojunctions; Interface states; Laser modes; Space charge;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
