• DocumentCode
    513955
  • Title

    Capacitance-voltage Investigation of Rechargeable Traps in Isotype Laser Heterojunctions

  • Author

    Bach, H.-G. ; Beister, G.

  • Author_Institution
    Heinrich-Hertz-Institut fÿr Nachrichtentechnik Berlin GmbH, D-1000 Berlin 10, FRG
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    483
  • Lastpage
    486
  • Abstract
    A new analytical C-V modelling procedure is presented which comprises deep level recharging processes at the isotype Pp heterojunction in conventional PpN DH laser structures. Experimental results an AlGaAs laser diodes can be explained by this approach.
  • Keywords
    Admittance measurement; Analytical models; Capacitance-voltage characteristics; Diode lasers; Frequency; Gallium arsenide; Heterojunctions; Interface states; Laser modes; Space charge;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436564
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=513955