DocumentCode
513967
Title
Physical Modelling of Bipolar Mode Field Effect Transistor (BMFET) for Circuit Simulation
Author
Busatto, G. ; Vitale, G.F.
Author_Institution
IRECE-CNR, Naples, Italy
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
427
Lastpage
430
Abstract
A charge-control model of the BMFET, based on a physical analysis of its operation is presented and discussed. This model is used to derive an equivalent circuit of BMFET capable of describing, with continuity, both bipolar and unipolar regions of its characteristics. The equivalent circuit is presented in a form suitable to be easily incorporated in a circuit simulator such as SPICE.
Keywords
Circuit simulation; Conductivity; Doping; Equations; Equivalent circuits; FETs; Physics; SPICE; Semiconductor process modeling; Steady-state;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436579
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