Title :
High Speed Ga0.47 In0.53 As MISFETs Grown by Metal Organic Vapor Phase Epitaxy
Author :
Splettstöber, J. ; Schulte, F. ; Trasser, A. ; Schmitz, D. ; Beneking, H.
Author_Institution :
Institute of Semiconductor Electronics, Technical University Aachen, Sommerfeldstrasse, D-5100 Aachen, FRG
Abstract :
MISFETs with SiO2 insulator have been successfully fabricated on MOVPE grown Ga0.47In0.53As layers on s.i. InP substrate. The devices show a very high extrinsic transconductance of 250 mS/mm and 300 mS/mm for a gate length of 3 ¿m and 1.5 ¿m, respectively, The current gain cutoff frequency is 6 GHz and 16 GHz for a gate length of 3 um and 1,5 um, respectively. A corresponding response time of 130 ps and 70 ps is measured. Fabricated inverters in p- GaInAs show a voltage amplification of -7 for a supply bias of 5 V.
Keywords :
Cutoff frequency; Delay; Epitaxial growth; Epitaxial layers; Indium phosphide; Insulation; Inverters; MISFETs; Time measurement; Transconductance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
