Title :
Dopant Activation and Defect Annihilation of Heavily Doped Arsenic Implanted Silicon Layers
Author :
Said, J. ; Jaouen, H. ; Ghibaudo, G. ; Stoemenos, I. ; Zaumseil, P.
Author_Institution :
Laboratoire de Physique des Composants Ã\xa0 Semiconducteurs, ENSERG, 23 Rue des Martyrs, B.P. 257, 38016 Grenoble Cedex, France
Keywords :
Amorphous materials; Annealing; Conductivity; Impurities; Lattices; Silicon; Solids; Surface resistance; Temperature; Thermal resistance;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
