DocumentCode
514013
Title
Two-dimensional Aspects of Ion Enhanced Reactive Etching of Silicon with SF6
Author
Gerodolle, A.
Author_Institution
CNET/CNS, chemin du Vieux-Chene, BP98, 38243 Meylan CEDEX
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
206
Lastpage
209
Abstract
A model for plasma silicon etching by SF6 is presented; based on the work of Petit-Pelletier, it has been implemented in a simulator, so as to explain two-dimensional effects. It is shown how this model, with its very simple assumptions on fluxes, allow a variety of observed profiles to be simulated.
Keywords
Analytical models; Equations; Etching; Plasma applications; Plasma measurements; Plasma simulation; Shape measurement; Silicon; Solid modeling; Sulfur hexafluoride;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436630
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