DocumentCode
514015
Title
Simulation of the Lateral Spread of Implanted Ions: Experiments
Author
Gong, L. ; Barthel, A. ; Lorenz, J. ; Ryssel, H.
Author_Institution
Fraunhofer Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestrasse 12, 8520 Erlangen, West-Germany
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
198
Lastpage
201
Abstract
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentrations of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
Keywords
Boron; Electric variables measurement; Etching; Ion implantation; Least squares methods; Lithography; MOS devices; Oxidation; Silicon; Testing;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436632
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