Title :
Simulation of the Lateral Spread of Implanted Ions: Experiments
Author :
Gong, L. ; Barthel, A. ; Lorenz, J. ; Ryssel, H.
Author_Institution :
Fraunhofer Arbeitsgruppe fÿr Integrierte Schaltungen, Artilleriestrasse 12, 8520 Erlangen, West-Germany
Abstract :
For the measurement of dopant concentrations in two dimensions (2d), a delineation technique has been optimized. The method yields up to three dopant equiconcentration lines in one sample. The concentrations of these lines can be changed by modification of the etching conditions. This technique is applied to the investigation of 2d ion implantation profiles.
Keywords :
Boron; Electric variables measurement; Etching; Ion implantation; Least squares methods; Lithography; MOS devices; Oxidation; Silicon; Testing;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
