• DocumentCode
    514016
  • Title

    The Modeling and Simulation of Reactive Ion Etching Rate Using Statistical Method

  • Author

    Feng, Xiangmmg ; Ruan, Gang

  • Author_Institution
    Microelec¿tronics Institute, Fudan University, Shanghai, P.R.China
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    202
  • Lastpage
    205
  • Abstract
    A method to obtain experiential formula of reactive ion etching (RIE) rate based on statistical mathematics combined with few experiments is presented, The precision of the model is 5% for CF4/O2 etching SiO2 and SF6/O2 etching P-doped poly-Si. The model is analytical and especially suitable for process simulation.
  • Keywords
    Analytical models; Chemical analysis; Cost function; Dry etching; Mathematical model; Mathematics; Microelectronics; Predictive models; Statistical analysis; Testing;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436633
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514016