Title :
Short-time Diffusion of Zinc into InP and InGaAsP from Spin-on Films
Author :
Schade, U. ; Enders, P. ; Kuhn, G. ; Unger, B. ; Vogel, K.
Author_Institution :
Central Institute of Optics and Spectroscopy, Berlin, CDR
Abstract :
Zn-containing sols are available for short-time diffusion of Zn into InP and InGaAsP, It is shown that the net acceptor concentration depends on the temperature cycle due to outdiffusion of intertstiaL Zn. In SI InP interstitial Zn acts as single-charged donor. Short-time diffusion is able to produce p+ -regions in InGaAsP emitting at 1.3 ¿m.
Keywords :
Chemistry; Cooling; Heat treatment; Indium phosphide; Optical films; Semiconductor films; Substrates; Surface treatment; Temperature; Zinc;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
