Title :
Schottky Barrier Enhancement on InP Using Pseudomorphic GaInP MBE Layers
Author :
Loualiche, S. ; Ginudi, A. ; Le Corre, A. ; Lecrosnier, D. ; Vaudry, C. ; Henry, L.
Author_Institution :
Centre National d´´Etudes des Télécommunications (CNET), Lannion B Route de Trégastel BP 40 22301 LANNION FRANCE CEDEX
Abstract :
The GaP and GaInP materials are used as high gap semiconductors on InP to fabricate Schottky diodes. The devices exhibit excellent electrical properties when the ternary strained layer is below the critical thickness. The best device (0.8 eV barrier height ; 1.14 ideality factor ; 0.1 nA reverse current at -1V and over 250V breakdown voltage) is obtained on a sample where 11 A (4 monolayers) of GaP are used as a high gap material to increase the Schottky barrier height on InP.
Keywords :
FETs; Gold; III-V semiconductor materials; Indium phosphide; Lattices; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor materials; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
