DocumentCode
514022
Title
Schottky Barrier Enhancement on InP Using Pseudomorphic GaInP MBE Layers
Author
Loualiche, S. ; Ginudi, A. ; Le Corre, A. ; Lecrosnier, D. ; Vaudry, C. ; Henry, L.
Author_Institution
Centre National d´´Etudes des Télécommunications (CNET), Lannion B Route de Trégastel BP 40 22301 LANNION FRANCE CEDEX
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
181
Lastpage
185
Abstract
The GaP and GaInP materials are used as high gap semiconductors on InP to fabricate Schottky diodes. The devices exhibit excellent electrical properties when the ternary strained layer is below the critical thickness. The best device (0.8 eV barrier height ; 1.14 ideality factor ; 0.1 nA reverse current at -1V and over 250V breakdown voltage) is obtained on a sample where 11 A (4 monolayers) of GaP are used as a high gap material to increase the Schottky barrier height on InP.
Keywords
FETs; Gold; III-V semiconductor materials; Indium phosphide; Lattices; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor materials; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436639
Link To Document