• DocumentCode
    514023
  • Title

    Reliable, High Temperature Stable Schottk Contacts to GaAs Based on LaB6 Diffusion Barriers

  • Author

    Wurfl, J. ; Singh, K.K. ; Hartnagel, H.L.

  • Author_Institution
    TH Darmstadt, Institut fÿr Hochfrequenztechnik, Merckstr. 25, 6100 Darmstadt, FR Germany
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    165
  • Lastpage
    168
  • Abstract
    The thermal stability of Au-LaB6 Schottky-diodes on n-GaAs has been investigated using I/V-measurements and XPS-analysis. The e-beam evaporated contact systems exhibit good electrical properties. It could be shown that the ideality factor and the barrier height improves after a certain annealing step and remains almost stable even after prolonged operation at 400°C. This demonstrates the suitability of lanthanum hexaboride to be used as a high temperature stable diffusion barrier in Au-LaB6 Schottky contacts to GaAs.
  • Keywords
    Annealing; Contacts; Gallium arsenide; Gold; Lanthanum; Microelectronics; Schottky barriers; Schottky diodes; Temperature; Thermal stresses;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514023