Title :
A Self-aligned Isolation-oxide Process Before Gate Formation for Enhanced Packing Density of Megabit DRAMs
Author :
Kuepper, P. ; Hasler, B. ; Roehl, S. ; Bolze, T. ; Diekmann, C. ; Mohr, H.G. ; Starflinger, W.
Author_Institution :
Siemens AG, Dept. HL T, Otto-Hahn-Ring 6, 8000 Mnchen 83, West Germany
Abstract :
A new completely selfaligned isolation oxide etch process prior to gate oxidation was developped with resulting gate oxide quality, isolation properties and topology comparable to a process with mask.
Keywords :
Capacitors; Cleaning; Dry etching; Oxidation; Plasma temperature; Random access memory; Strips; Topology; Uncertainty; Wet etching;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
