Simulation of Parasitic Currents and Other Effects in Narrow Channel Devices

An investigation was carried out into how device isolation will influence the device characteristics. Either a field implant and/or field oxidation is applied to isolate the devices from each other and to define the extent of the channel. The results of that investigation are presented here. The investigations have been carried out by MINIMOS 5, a fully three-dimensional simulation program. The three-dimensional effect of the threshold shift due to parasitic currents for small channel devices has been successfully modeled.