Title :
Simulation of Parasitic Currents and Other Effects in Narrow Channel Devices
Author_Institution :
Campusbased Engineering Center, Digital Equipment Corporation, FavoritenstraÃ\x9fe 7, A-1040 Wien, AUSTRIA
Abstract :
An investigation was carried out into how device isolation will influence the device characteristics. Either a field implant and/or field oxidation is applied to isolate the devices from each other and to define the extent of the channel. The results of that investigation are presented here. The investigations have been carried out by MINIMOS 5, a fully three-dimensional simulation program. The three-dimensional effect of the threshold shift due to parasitic currents for small channel devices has been successfully modeled.
Keywords :
Analytical models; Auditory implants; Differential equations; Doping profiles; Integrated circuit modeling; MOSFET circuits; Poisson equations; Predictive models; Solid modeling; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
