A New Algorithm to Accelerate Convergence in the Simulation of Semiconductor Devices

A new algorithm for an initial guess of the solution of the semiconductor equations has been developed. It is based on a `quasi-equilibrium´ approximation of the electrostatic potential and the electron and hole densities. The algorithm has been implemented into the two dimensional general purpose device simulator BAMBI [1,2] and applied to various MOS and bipolar structures. It works in a large range of bias conditions, limited only by high injection, and exhibits excellent convergence properties in combination with the hybrid solution method.