DocumentCode
514037
Title
Scaling-down of Submicrometer GaAs MESFETs
Author
Bannov, N. ; Valiev, K. ; Ryzhi, Y. ; Khrenov, G.
Author_Institution
Institute of Physics and Technology, USSR Academy of Sciences, Moscow
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
81
Lastpage
84
Abstract
Monte Carlo particle method is used to investigate the submicrometer GAs MESFET´ electrical characteristics transformation when all dimensions of transistor have been decreased proportionate. Essential influence of semiinsulated substrate parameters on characteristics transformation is demonstrated.
Keywords
Electrons; Gallium arsenide; Insulation; Kinetic theory; MESFETs; Optical scattering; Plasma properties; Plasma simulation; Poisson equations; Substrates;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436662
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