Title :
The Mobility Model in MINIMOS
Author :
Slotboom, J.W. ; Streutker, G.
Author_Institution :
Philips Research Laboratories, P.O.B. 80000, 5600 JA Eindhoven, The Netherlands
Abstract :
Several authors have shown that the dependence of the mobility on the electric field perpendicular to the gate oxide is described by a "universal curve" if an effective normal electric field is used. In this paper we show that the MINIMOS-4 local mobility model agrees very well with these empirical data over the whole range of electric fields. The numerical extraction method for determining the effective mobility and effective field are given.
Keywords :
Analytical models; Current measurement; Electric variables measurement; Ice; Large Hadron Collider; Nominations and elections; Q measurement; Thickness measurement; Voltage;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
