DocumentCode
514038
Title
The Mobility Model in MINIMOS
Author
Slotboom, J.W. ; Streutker, G.
Author_Institution
Philips Research Laboratories, P.O.B. 80000, 5600 JA Eindhoven, The Netherlands
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
87
Lastpage
91
Abstract
Several authors have shown that the dependence of the mobility on the electric field perpendicular to the gate oxide is described by a "universal curve" if an effective normal electric field is used. In this paper we show that the MINIMOS-4 local mobility model agrees very well with these empirical data over the whole range of electric fields. The numerical extraction method for determining the effective mobility and effective field are given.
Keywords
Analytical models; Current measurement; Electric variables measurement; Ice; Large Hadron Collider; Nominations and elections; Q measurement; Thickness measurement; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436663
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