DocumentCode
514040
Title
An InGaAs/GaAs Strained Superlattice MSM Photodiode for Fast Light Detection at 1.3 μm
Author
Zirngibl, M. ; Bischoff, J.C. ; Sachot, R. ; Ilegems, M. ; Beaud, P. ; Hodel, W.
Author_Institution
Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology, 1015 Lausanne, Switzerland
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
77
Lastpage
80
Abstract
A metal-semiconductor-metal (MSM) detector on GaAs sensitive up to 1.4 μm is presented. The active layer consists of a MBE grown InGaAs/GaAs superlattice. The large size detector (2500 μm2) is defined by a simple one-level lift-off process. Despite the lattice mismatch, the detector shows a response time below 30 ps full width at half maximum at 1.3 μm and a relatively low dark current of 1 μA at 10 V bias.
Keywords
Appropriate technology; Dark current; Fast light; Gallium arsenide; Indium gallium arsenide; Lattices; Metallic superlattices; Optical noise; Photodiodes; Physics;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436665
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