Silicon Oxidation Rate Dependence on Dopant Pile-up

Oxide growth on highly As-doped silicon has been monitored during steam oxidation at temperatures of 700°C and 800°C. Basically, it was found that enhanced oxide growth occurred, which is consistent with previous observations. The generally accepted model attributes the enhancement entirely to the electrically active surface doping prior to oxidation. In contrast hereto, detailed analysis of the growth data showed that the enhancement is not only if at all dependent on this parameter. Instead, a very strong dependence on the dopant pile-up has been observed.