DocumentCode
514044
Title
Enhanced Process Window for BPSG Flow in a Salicide Process Using a LPCVD Nitride Cap Layer
Author
de Vries, R.G.M.Penning ; Osinski, K.
Author_Institution
Advanced MOS Process Development Group, Philips Research Laboratories, P.O. Box 80.000, 5600 JA Eindhoven, The Netherlands
fYear
1989
fDate
11-14 Sept. 1989
Firstpage
45
Lastpage
48
Abstract
Optimisation of BPSG flow and TiSi2 degradation in a 1.0 ¿m CMOS process is studied. It is shown that a nitride cap layer allows to flow the BPSG in a steam ambient without excessive degradation of the silicide. A simple model for the degradation of the TiSi2 sheet resistance is derived. The observed degradation of the TiSi2 film is independent of the substrate, but is a function of the film thickness.
Keywords
CMOS process; Degradation; Laboratories; Performance analysis; Planarization; Rapid thermal annealing; Risk analysis; Semiconductor films; Temperature dependence; Thermal resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location
Berlin, Germany
Print_ISBN
0387510001
Type
conf
Filename
5436672
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