DocumentCode
514045
Title
Characterization and analysis of hot-carrier degradation in p-channel transistors using constant current stress experiments
Author
Bellens, R. ; Heremans, P. ; Groeseneken, G. ; Maes, H.E.
Author_Institution
IMEC, Kapeldreef 75, B-3030 Heverlee, Belgium
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
159
Lastpage
162
Abstract
An alternative procedure is proposed to perform accelerated lifetime experiments in p-channel transistors in order to resolve some problems that occur using the conventional constant voltage procedure. The results are correlated with the degradation mechanisms and a comparison with n-channel transistors is carried out.
Keywords
Acceleration; Degradation; Hot carriers; Lead compounds; MOSFETs; Occupational stress; TV; Threshold voltage; Transconductance; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436673
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