• DocumentCode
    514049
  • Title

    Semiconductor Device Fabrication with High Energy Ion Implantation

  • Author

    Harms, T. ; Goser, K. ; Hilleringmann, U. ; Fahrner, W. ; Oppermann, K.

  • Author_Institution
    University of Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Postfach 500500, D-4600 Dortmund
  • fYear
    1989
  • fDate
    11-14 Sept. 1989
  • Firstpage
    33
  • Lastpage
    36
  • Abstract
    A high energy ion implantation realized in a BiCMOS technology reduces the npn-transistor collector series resistance RC and improves the Latch-up behavior.
  • Keywords
    Aluminum; Annealing; Bipolar transistors; Etching; Fabrication; Implants; Ion implantation; Resists; Semiconductor devices; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
  • Conference_Location
    Berlin, Germany
  • Print_ISBN
    0387510001
  • Type

    conf

  • Filename
    5436677
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514049