Title :
Semiconductor Device Fabrication with High Energy Ion Implantation
Author :
Harms, T. ; Goser, K. ; Hilleringmann, U. ; Fahrner, W. ; Oppermann, K.
Author_Institution :
University of Dortmund, Lehrstuhl Bauelemente der Elektrotechnik, Postfach 500500, D-4600 Dortmund
Abstract :
A high energy ion implantation realized in a BiCMOS technology reduces the npn-transistor collector series resistance RC and improves the Latch-up behavior.
Keywords :
Aluminum; Annealing; Bipolar transistors; Etching; Fabrication; Implants; Ion implantation; Resists; Semiconductor devices; Silicon compounds;
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
