DocumentCode :
514050
Title :
Deep Submicron Dry Etching
Author :
Laporte, Ph.
Author_Institution :
LETI, a division of Commisariat á l´´Energie Atomique, CENG 85X-38041 GRENOBLE CEDEX FRANCE
fYear :
1989
fDate :
11-14 Sept. 1989
Firstpage :
13
Lastpage :
22
Keywords :
Anisotropic magnetoresistance; Costs; Dry etching; Inductors; Laboratories; Manufacturing; Plasma applications; Plasma devices; Plasma materials processing; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1989. ESSDERC '89. 19th European
Conference_Location :
Berlin, Germany
Print_ISBN :
0387510001
Type :
conf
Filename :
5436678
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=514050
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