• DocumentCode
    514053
  • Title

    Modelling of Insulated Gate Bipolar Transistors with Buffer-Layers

  • Author

    Brunner, H. ; Kapels, H. ; Porst, A. ; Silber, D.

  • Author_Institution
    SIEMENS AG, ZFE T KM 2, Otto-Hahn-Ring 6, 81739 Mÿnchen, Germany
  • fYear
    1996
  • fDate
    9-11 Sept. 1996
  • Firstpage
    299
  • Lastpage
    302
  • Abstract
    Quantitatively correct simulations of buffer IGBTs demand adjustments of channel and of concentration dependent SRH parameters (Scharfetter relation). In particular the Scharfetter parameter required for quantitative agreement differs considerably from those used by previous authors. A parameter set for successful simulation of very different structures has been obtained using test devices.
  • Keywords
    Charge carrier processes; Doping profiles; Insulated gate bipolar transistors; Insulation; Medical simulation; Platinum; Semiconductor process modeling; Standards development; Testing; Velocity measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1996. ESSDERC '96. Proceedings of the 26th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    286332196X
  • Type

    conf

  • Filename
    5436682
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514053