• DocumentCode
    514057
  • Title

    Gettering and Deep States in P-Type Czochralski Silicon

  • Author

    Jha, N. ; Peaker, A.R. ; Keefe-Fraundorf, G.

  • Author_Institution
    Department of Electrical Engineering and Electronics, Centre for Electronic Materials, University of Manchester, Institute of Science and Technology, P.O. Box 88, Manchester M60 1QD, England; B.P. Research Centre, Sunbury on Thames. U.K
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    565
  • Lastpage
    568
  • Abstract
    This paper reports deep state measurements on boron doped Czochralski silicon. A comparison is made between four gettering technologies after the slices have been subjected to oxidation cycles in steam at 1100°C for two hours. An analysis of the results is made using a diffusion model of gettering.
  • Keywords
    Boron; Chemical analysis; Gain measurement; Gettering; Impurities; Oxidation; Pollution measurement; Silicon; Surface treatment; Time measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436691
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514057