32 dB Gain 28 nm Bulk CMOS W-Band LNA

Author

Pepe, Domenico ; Zito, Domenico

Author_Institution

Tyndall Nat. Inst., Cork, Ireland

Volume

25

Issue

1

fYear

2015

fDate

Jan. 2015

Firstpage

55

Lastpage

57

Abstract

A high gain W-band low noise amplifier for radiometric applications in 28 nm bulk CMOS technology is presented. Pads, inductors, capacitors and coplanar waveguides have been custom designed. The parasitic effects of the transistor layout have been evaluated by means of electromagnetic simulations and calculations based on data reported in the design rule manual of the technology. The amplifier consists of six cascode stages with input, output and interstage conjugate matching for maximum power transfer. Measurement results show a peak gain of 32 dB and a noise figure of 5.3 dB at 91 GHz.

Keywords

CMOS analogue integrated circuits; capacitors; coplanar waveguides; inductors; integrated circuit layout; low noise amplifiers; millimetre wave amplifiers; millimetre wave integrated circuits; bulk CMOS W-band LNA; capacitor; cascode stage; conjugate matching; coplanar waveguide; electromagnetic simulation; frequency 91 GHz; gain 32 dB; inductor; low noise amplifier; noise figure 5.3 dB; pad; parasitic effect; power transfer; radiometric application; size 28 nm; transistor layout; CMOS integrated circuits; Gain; Inductors; Microwave radiometry; Noise; Noise measurement; Transistors; CMOS; LNA; W-band; mm-wave 28 nm; radiometer;

fLanguage

English

Journal_Title

Microwave and Wireless Components Letters, IEEE

Publisher

ieee

ISSN

1531-1309

Type

jour

DOI

10.1109/LMWC.2014.2370251

Filename

6963514