A Novel Realistic Model for Threshold Voltage of Short Channel MOSFETs

The proposed model gives more realistic account of the physics of short channel behavior than its predecessors allowing fits to experimental data and simulated results without resorting to unrealistic values for clearly defined parameters. The most distinct and new feature of this model is the prediction of the onset of the threshold voltage reduction at a critical range of channel lengths. The model is formulated in terms of simple analytic formulae.