The Voltage-Doping Transformation a New Approach to the Modelling of MOSFET Short-Channel Effects

In this paper we show that the influence of the drain-source field on the potential barrier height is physically equivalent and can be replaced by the reduction in channel doping concentration according to the following formula N*= N-2csV*DS/qL² derived from the 2-d Poisson equation. Thus the actual barrier height for any drain bias VDS and channel length L can be easily calculated using the well-known 1-d (long-channel) solutions. This simple but general procedure, hereafter called the Voltage-Doping Transformation (VDT) has been examined with fairly good results by comparison of the analytically calculated potential distributions with 2-d numerical simulation. An examplary application of the VDT to threshold voltage calculations is also shown.