Title :
Reliability of Low-Noise Microwave HEMT by MOCVD
Author :
Tanaka, K. ; Takakuwa, H. ; Kobayashi, J. ; Kato, Y.
Author_Institution :
Sony Corp. Semiconductor Group, 4-14-1, Asahicho, Atsugi, Kanagawa 243, JAPAN
Abstract :
Low-noise HEMTs were evaluated for reliability by conducting high temperature accelerated life tests and examining the changes in electrical characteristics of the device as well as visual signs of degradation. The reliability of the HEMTs was found to be on the same level as that of conventional GaAs MESFETs, and no degradation associated with the unique structure of the HEMT was observed.
Keywords :
Degradation; Electric variables; Gallium arsenide; HEMTs; Life estimation; Life testing; MESFETs; MOCVD; Microwave devices; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
