DocumentCode
514064
Title
Reliability of Low-Noise Microwave HEMT by MOCVD
Author
Tanaka, K. ; Takakuwa, H. ; Kobayashi, J. ; Kato, Y.
Author_Institution
Sony Corp. Semiconductor Group, 4-14-1, Asahicho, Atsugi, Kanagawa 243, JAPAN
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
621
Lastpage
624
Abstract
Low-noise HEMTs were evaluated for reliability by conducting high temperature accelerated life tests and examining the changes in electrical characteristics of the device as well as visual signs of degradation. The reliability of the HEMTs was found to be on the same level as that of conventional GaAs MESFETs, and no degradation associated with the unique structure of the HEMT was observed.
Keywords
Degradation; Electric variables; Gallium arsenide; HEMTs; Life estimation; Life testing; MESFETs; MOCVD; Microwave devices; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436705
Link To Document