• DocumentCode
    514065
  • Title

    GaAs-Device Life-Time Improvements by New Results on Metal-Electrode Fabrication

  • Author

    Gupta, R.P. ; Hartnagel, H.L. ; Kretschmer, K.-H. ; Schutz, R. ; Würfl, J.

  • Author_Institution
    Institut fÿr Hochfrequenztechnik, Technische Hochschule Darmstadt, MerckstraÃ\x9fe 25, 6loo Darmstadt, West Germany; Central Electronics Engineering Research Institute, Pilani (Rajasthan) 333031, India
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    609
  • Lastpage
    611
  • Abstract
    The development of an Au-WSi2-Ge ohmic contact on GaAs for highly stable devices is reported. Coplanar interelectrode material migration is minimized by a technology leading to oxygen-poor GaAs surfaces.
  • Keywords
    Annealing; Electrodes; Etching; FETs; Fabrication; Gallium arsenide; Gold; Ohmic contacts; Surface treatment; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436706
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514065