Title :
The Influence of Trench Isolation on Sub-Micron Transistors
Author :
Roberts, M C ; Foster, D J ; Bolbot, P H ; Medhurst, P L
Author_Institution :
Plessey Research Caswell Limited, The Allen Clark Research Centre, Caswell, Towcester, Northants. U.K. NN12 8EQ
Keywords :
CMOS process; Circuits; Conductors; Electric variables; Geometry; Leakage current; MOS devices; MOSFETs; Power dissipation; Threshold voltage;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
