• DocumentCode
    514074
  • Title

    Mobility Model for Sillicon Inversion Layers

  • Author

    Walker, A.J. ; Woerlee, P.H.

  • Author_Institution
    Philips Research Laboratories, 5600 JA Eindhoven The Netherlands
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    667
  • Lastpage
    670
  • Abstract
    The room temperature low field mobility of electrons and holes in silicon inversion layers has been studied to improve the mobility modeling. Samples with gate oxide thicknesses between 10nm and 50nm and surface doping levels of up to 4.5 × 1017 cm¿3 have been used. Three scattering mechanisms were considered and an accurate mobility model, derived from these, will be presented.
  • Keywords
    Charge carriers; Equations; MOS devices; MOSFETs; Rough surfaces; Scattering; Semiconductor process modeling; Silicon; Surface roughness; Temperature;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436717
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514074