• DocumentCode
    514080
  • Title

    Verigrid-FCTh Switching 10A at 1000V

  • Author

    Gruening, H. ; Voboril, J.

  • Author_Institution
    Research Center, CRBS. L, BBC Brown Boveri AG, CH-5405 Baden Switzerland
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    641
  • Lastpage
    644
  • Abstract
    New field controlled thyristors (FCTh) have been realized by a recessed gate technique (VERIGRID), which exhibit a higher aspect ratio of the control fingers than devices produced so far. Thus a static blocking gain in excess of 500 could be achieved, and more than 10A (125A/cm2) were switched off snubberless at 1000V and inductive load. Furthermore the doping of the finger sidewalls turned out to be very important for the on state: with high doping a hole bypass is created, and long channel JFET saturation is observed instead of a low resistance like that of a pin diode.
  • Keywords
    Anodes; Cathodes; Computer simulation; Doping; Etching; Fingers; Insulated gate bipolar transistors; Testing; Thyristors; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436723
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514080