The Observation of Gate Length Dependence of GIDL in n-MOSFET´s

The gate length dependence of GIDL current in n-MOSFET´s was observed for the first time. It was found that larger GIDL current detected in devices with higher energy and dose of n⁺-As S/D implantation and longer gate length. This result can be explained by the increase of the band-to-defect tunneling due to defect generation caused by both implantation damage and mechanical stress near the gate edge.