DocumentCode
514083
Title
Simulation of Stressed N- and P-Channel Mosfet´s: Fixed Oxide Charges and Fast Interface States
Author
Schwerin, A. ; Hansch, Walter ; Weber, W.
Author_Institution
SIEMENS Corporate Research and Development, Microelectronics, Otto-Hahn-Ring 6, 8000 Mÿnchen 83, FRG
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
717
Lastpage
720
Abstract
MOSFET´s stressed at high drain voltages show shifts in the device characteristics. We study the effect of the stress-induced damaged region on the device characteristics for conventional n- and p-channel devices. We give a consistent description of degradation effects on the drain current in the subthreshold and the pentode region of the MOSFET as well as on the substrate current. In that way it is possible to decide between several models which might be appealing in one or the other regime.
Keywords
Circuits; Degradation; Interface states; MOSFETs; Microelectronics; Research and development; Solid modeling; Stress; Very large scale integration; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436729
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