Experimental Evidence for Different Saturation Velocities of Electrons in Silicon

This paper presents the piezoresistance effect of n-inversion layers in the hot-electron regime. The measurements were performed on short-channel n-MOSFETS both at 77 and 300K. From the experimental data clear evidence is obtained for different saturation velocities of electrons in Si dependiing on the occupation of the subbands. Including this effect good agreement between theory and experiment mainly at 300K is achieved.