Small Geometry SOI/CMOS Devices on SIMOX Substrates

Small geometry CMOS transistors have been made in SOI wafers produced by high dose oxygen implantation. By performing the implantation at high energy (200 keV) and annealing the wafers at 1300°C, the thickness and quality of the resulting silicon film is such that the expensive and difficult to control step of epitaxial growth is not needed. The lack of any major crystallographic defects (other than threading dislocations) results in the absence of any anomolous lateral diffusion of the source/drain dopants, allowing 1 micron gates to be used without excessive channel shortening.