Title :
Oxygen Implantation for SOI Device Technologies
Author :
Yallup, Kevin ; De Veirman, An ; Dupas, Luc ; De Meyer, Kristin
Author_Institution :
Analog Devices, c/o IMEC Kapeldreef 75, B-3030 Leuven
Abstract :
In this work the formation of silicon on insulator (SOI) substrates by oxygen implantation (SIMOX) and annealing followed by an epitaxial deposition step will be described. Physical results for the material will be presented and then the corresponding electrical parameters will be discussed and compared with those obtained from bulk wafers processed simultaneously. From the results described we hope to indicate the areas in which problems are likely to occur when using such substrates in an IC process.
Keywords :
Annealing; CMOS process; Hafnium; Heat treatment; Nitrogen; Oxygen; Protection; Silicon on insulator technology; Substrates; Temperature;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
