DocumentCode
514102
Title
Oxygen Implantation for SOI Device Technologies
Author
Yallup, Kevin ; De Veirman, An ; Dupas, Luc ; De Meyer, Kristin
Author_Institution
Analog Devices, c/o IMEC Kapeldreef 75, B-3030 Leuven
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
521
Lastpage
524
Abstract
In this work the formation of silicon on insulator (SOI) substrates by oxygen implantation (SIMOX) and annealing followed by an epitaxial deposition step will be described. Physical results for the material will be presented and then the corresponding electrical parameters will be discussed and compared with those obtained from bulk wafers processed simultaneously. From the results described we hope to indicate the areas in which problems are likely to occur when using such substrates in an IC process.
Keywords
Annealing; CMOS process; Hafnium; Heat treatment; Nitrogen; Oxygen; Protection; Silicon on insulator technology; Substrates; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436751
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