DocumentCode
514107
Title
1300 nm DFB-Laser with Reactive Ion Beam Etched Grating Deformation-Free Overgrown by LPE
Author
Schilling, M. ; Wiinstel, K. ; Schweizer, H. ; Scherb, J. ; Mozer, A. ; Ldsch, K. ; Hildebrand, O.
Author_Institution
Standard Elektrik Lorenz AG Research Centre, Optoelectronic Components Division ZT/FZWO, Lorenzstr. 10, D-7000 Stuttgart 40, Federal Republic of Germany
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
799
Lastpage
802
Abstract
DFB lasers were fabricated for the first time with gratings dry etched into InP substrate by reactive ion beam etching (RIBE). Deformation-free overgrowth of these 0.2 ¿m deep corrugations was performed by liquid phase epitaxy (LPE). Threshold currents (cw, 25 °C) as low as 23 mf demonstrate that no severe degradations occur in these devices due to surface damage caused by the dry etching. Single mode operation with a sidemode suppression ≫ 35 dB is obtained due to strong coupling of the grating. HF-measurements reveal a 3 dB dulation bandwidth of 9 GHz for the DFB-DC-DCPBH structure.
Keywords
Bandwidth; Corrugated surfaces; Degradation; Dry etching; Epitaxial growth; Gratings; Indium phosphide; Ion beams; Substrates; Threshold current;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436756
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