DocumentCode :
514113
Title :
The Usefulness of Advanced Drain Structures as Emitters in Scaled BICMOS
Author :
Winnerl, J. ; Neppl, F. ; Vollmer, B. ; Stegherr, M. ; Pfäffel, B.
Author_Institution :
Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen, FRG
fYear :
1987
fDate :
14-17 Sept. 1987
Firstpage :
25
Lastpage :
28
Abstract :
Bipolar transistors can be implemented in a CMOS technology without excessive expense using the n-channel source/drain implantation simultaneously for the formation of the bipolar emitter. During MOS scaling the change of the drain structures from phosphorus to DID and LDD influences the individual bipolar device parameters. However this BICMOS concept can be extended to sub-¿m CMOS without loosing performance.
Keywords :
BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit stability; Conductivity; Isolation technology; Lithography; Microelectronics; Research and development; Transconductance;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
Print_ISBN :
0444704779
Type :
conf
Filename :
5436762
Link To Document :
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