• DocumentCode
    514113
  • Title

    The Usefulness of Advanced Drain Structures as Emitters in Scaled BICMOS

  • Author

    Winnerl, J. ; Neppl, F. ; Vollmer, B. ; Stegherr, M. ; Pfäffel, B.

  • Author_Institution
    Siemens AG, Central Research and Development, Microelectronics, Otto-Hahn-Ring 6, D-8000 Mÿnchen, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    25
  • Lastpage
    28
  • Abstract
    Bipolar transistors can be implemented in a CMOS technology without excessive expense using the n-channel source/drain implantation simultaneously for the formation of the bipolar emitter. During MOS scaling the change of the drain structures from phosphorus to DID and LDD influences the individual bipolar device parameters. However this BICMOS concept can be extended to sub-¿m CMOS without loosing performance.
  • Keywords
    BiCMOS integrated circuits; Bipolar transistors; CMOS technology; Circuit stability; Conductivity; Isolation technology; Lithography; Microelectronics; Research and development; Transconductance;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436762
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514113