An Advanced Bipolar Process using Trench Isolation and Polysilicon Emitter for High Speed VLSI

Author

Roche, N. ; Borel, G. ; Imbert, J.L. ; Thomas, D. ; Fritsch, L. ; Celi, D. ; Hunt, P. ; Hefner, A.

Author_Institution

THOMSON SEMICONDUCTEURS BP 200 38522 Saint-EGREVE Cedex FRANCE

fYear

1987

fDate

14-17 Sept. 1987

Firstpage

507

Lastpage

510

Keywords

Boron; Dielectrics; Electrodes; Etching; Fabrication; Oxidation; Resists; Silicon; Substrates; Very large scale integration;

fLanguage

English

Publisher

ieee

Conference_Titel

Solid State Device Research Conference, 1987. ESSDERC '87. 17th European

Conference_Location

Bologna, Italy

Print_ISBN

0444704779

Type

Filename

5436775

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