Title :
The effect of device geometry on IGFET characteristics
Author :
Serack, J.A. ; Walton, A.J. ; Robertson, J.M.
Author_Institution :
Ediniburgh MiNcrofabrication Facility, University of Edinburgh, Edinburgh, Scotland.
Abstract :
A novel technique for the fabrication of asymmetrical incompletely gated transistors is described. The subthreshold characteristics of transistors fabricated using the technique are measured and conclusions concerning the mechanisms responsible for the observations are presented.
Keywords :
Aluminum; Capacitance; Circuits; Electric variables; Etching; Fabrication; Geometry; Implants; Marine vehicles; Process design;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
