Title :
Heterojunction Bipolar Photo-Transistors for High Speed Logic and Communication Applications
Author :
Doherty, J. ; Truscott, W.S.
Author_Institution :
Joint Laboratory of Physics and Electrical Engineering, Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, P O Box 88, Manchester M60 1QD, U K
Abstract :
We report the results of an experimental study on a GaAs/AlGaAs double heterojunction bipolar transistor structure which can be integrated with fast optical detectors. Results are presented showing that the structure can be fabricated into transistors with fts over 100 GHz, and that the photodetecting structure has a good sensitivity with an incident wavelength of 830 nm.
Keywords :
Double heterojunction bipolar transistors; Gallium arsenide; Gold; High speed optical techniques; Ion implantation; Logic; Optical detectors; Optical sensors; Optical waveguides; Waveguide junctions;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
