• DocumentCode
    514128
  • Title

    Heterojunction Bipolar Photo-Transistors for High Speed Logic and Communication Applications

  • Author

    Doherty, J. ; Truscott, W.S.

  • Author_Institution
    Joint Laboratory of Physics and Electrical Engineering, Department of Electrical Engineering and Electronics, University of Manchester Institute of Science and Technology, P O Box 88, Manchester M60 1QD, U K
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    887
  • Lastpage
    890
  • Abstract
    We report the results of an experimental study on a GaAs/AlGaAs double heterojunction bipolar transistor structure which can be integrated with fast optical detectors. Results are presented showing that the structure can be fabricated into transistors with fts over 100 GHz, and that the photodetecting structure has a good sensitivity with an incident wavelength of 830 nm.
  • Keywords
    Double heterojunction bipolar transistors; Gallium arsenide; Gold; High speed optical techniques; Ion implantation; Logic; Optical detectors; Optical sensors; Optical waveguides; Waveguide junctions;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514128