• DocumentCode
    514131
  • Title

    Measurement and Calculation of Base-Resistance Components of Modern High-Speed Bipolar Transistors

  • Author

    Fertsch, J. ; Voit, H. ; Klose, H. ; Böhm, W.R.

  • Author_Institution
    Siemens AG, Central Research and Development, Otto-Hahn-Ring 6. D 8000 Mÿnchen 83, FRG
  • fYear
    1987
  • fDate
    14-17 Sept. 1987
  • Firstpage
    969
  • Lastpage
    972
  • Abstract
    A numerical method based on the Gummel-Poon model is presented, which permits to calculate the components of the base resistance from the layout and easily accessible DC-parameters. The calculated results are compared with results derived from measured S-parameters.
  • Keywords
    Bipolar transistors; Contact resistance; Current measurement; Design optimization; Electrical resistance measurement; Equations; Frequency measurement; Impedance; Region 3; Scattering parameters;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
  • Conference_Location
    Bologna, Italy
  • Print_ISBN
    0444704779
  • Type

    conf

  • Filename
    5436788
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=514131