Title :
The Physics of Silicide Base Transistors
Author :
Rosencher, E. ; Avitaya, F. Arnaud D ; Badoz, P.A. ; Glastre, G. ; Vincent, G.
Author_Institution :
Centre National d´´Etucdes des T?l?communications - BP : 98 - Chemin du Vieux Ch?ne - 38243 MEYLAN CEDEX - FRANCE
Abstract :
Epitaxia Si/CoSi2/Si structures can be grown under ultra-high vacuum conditios. The metallic CoSi2 films can be extremely thin typically between 1 nm and 2O nm. The electrical properties of these heterostructures are presented, mainly the transport of electrons in the metallic films parallel to the interfaces and the transfer of electrons through the metal film. The influence of pinholes in the CoSi2 layers will be discussed.
Keywords :
Lattices; Physics; Scanning electron microscopy; Silicides; Silicon; Surface contamination; Surface morphology; Temperature; Transmission electron microscopy; Vacuum technology;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
