Title :
Characterization of Optimization of Bipolar Technologies by Means of High Speed Circuit Design
Author :
Wilhelm, Wilhelm
Author_Institution :
Siemens AG, WIS P SL 2, BalanstraÃ\x9fe 73, D-8000 Mÿnchen 80
Abstract :
The speed of bipolar technologies is limited by two time constants. One of these time constants is caused by parasitic effects, the other one by the base transit time. In this paper an attempt is made to weigh both figures for optimum performance at different circuit designs.
Keywords :
Bipolar transistors; Circuit synthesis; Design optimization; Noise generators; Optical noise; Optical receivers; Parasitic capacitance; Resistors; Switches; Tellurium;
Conference_Titel :
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location :
Bologna, Italy
