DocumentCode
514138
Title
Characterization of Optimization of Bipolar Technologies by Means of High Speed Circuit Design
Author
Wilhelm, Wilhelm
Author_Institution
Siemens AG, WIS P SL 2, BalanstraÃ\x9fe 73, D-8000 Mÿnchen 80
fYear
1987
fDate
14-17 Sept. 1987
Firstpage
499
Lastpage
501
Abstract
The speed of bipolar technologies is limited by two time constants. One of these time constants is caused by parasitic effects, the other one by the base transit time. In this paper an attempt is made to weigh both figures for optimum performance at different circuit designs.
Keywords
Bipolar transistors; Circuit synthesis; Design optimization; Noise generators; Optical noise; Optical receivers; Parasitic capacitance; Resistors; Switches; Tellurium;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1987. ESSDERC '87. 17th European
Conference_Location
Bologna, Italy
Print_ISBN
0444704779
Type
conf
Filename
5436799
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