Control of the Fabrication Steps of InP MIS Transistors by Means of Scanning Photoluminescence Measurements

We show the efficiency of scanning photoluminescence measurements for monitoring the quality, homogeneity and reproducibility of the starting wafers and processed substrates after each technological step during the realization of InP MIS transistors. Owing to this new technique, which is noninvasive, contactless and fast, we have obtained a considerable improvement of the fabricated devices.