DocumentCode
514150
Title
Real-Space Transfer in Heterojunction FET´s : Monte-Carlo Simulation and Analytical Model
Author
Mouis, M. ; Paviet-Salomon, F. ; Dollfus, P. ; Castagne, R.
Author_Institution
Institut d´´Electronique Fondamentale, CNRS-UA 22, Université Paris-Sud, F-91405 Orsay Cedex, France
fYear
1988
fDate
13-16 Sept. 1988
Abstract
We present the results of a Monte-Carlo simulation of the NERFET, a field effect transistor where the realspace transfer of channel electrons over a heterojunction barrier gives rise to a negative differential resistance (NDR) effect on drain current. An analytical expression of the real-space current is built upon our simulation results. By this way, we construct an analytical model of the NERFET which shows go agreement with Monte-Carlo results without the need of adjusting any parameter.
Keywords
Analytical models; Circuit simulation; Electron mobility; FETs; Gallium arsenide; Heterojunctions; High speed integrated circuits; Irrigation; Probability; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location
Montpellier, France
Print_ISBN
2868830994
Type
conf
Filename
5436971
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