Title :
Comparison of ECL Gate Performances using Different Heterojunction Bipolar Transistors Process
Author :
Dangla, J. ; Havond, D.
Author_Institution :
Centre National d´´Etudes des Télécommunications, Laboratoire de Bagneux, 196, rue H. Ravera, F-92220 Bagneux, France
Abstract :
The switching performance of GaAlAs/GaAs n - p - n Heterojunction Bipolar transistors (HBT) has been investigated for Emitter Coupled Logic (ECL) circuit operation using a CAD model witch has been validated by experimental results. Switching time is discussed in conjunction with layer parameters, design rules, and technological process. The simulation shows the existence of an optimun both for the base thickness and the emitter width. Finally Mesa process give lower switching time than the implanted one.
Keywords :
Circuit simulation; Coupling circuits; Design automation; Gallium arsenide; Heterojunction bipolar transistors; Integrated circuit technology; Laboratories; Logic circuits; Logic design; Logic devices;
Conference_Titel :
Solid State Device Research Conference, 1988. ESSDERC '88. 18th European
Conference_Location :
Montpellier, France
